The motor drive has been widely adopted in modern power applications. With the emergency\nof the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET,\nperformance of the motor drive can be improved in terms of efficiency, power density, and reliability.\nHowever, the fast switching transient and serious switching ringing of the SiC MOSFET can cause\nunwanted high-frequency (HF) electromagnetic interference (EMI), which may significantly reduce the\nreliability of the motor drive in many aspects..............
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